Bdx53c datasheet pdf
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High DC Current Gain h FE = (Typ) @ I C = Adc BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose Features. integrated antiparallel collector-emitter diode. BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose Tags OEM:SGS Ates Transistor BDX53C Datasheet Silicon NPN Darlington Transistor BDX53C Medium Power Linear and Switching V 8A DATASHEET OEM –SGS Ates Source DESCRIPTION. Manufacturer: STMicroelectronics Features High DC Current Gain − hFE = (Typ) @ IC = Adc Collector Emitter Sustaining Voltage − @ mAdc VCEO(sus) =Vdc (Min BDX53C Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Good hFE linearity. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Waiting. In Stock, Stock, Can Ship Immediately. Learn more about ECAD Model. Application. High fT frequency Monolithic Darlington configuration with. The BDX53B and BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Je TO plastic The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices. Audio amplifiersLinear and switching industrial equipmentDescription. Learn more about STMicroelectronics BDX53C. Features. Add To Project Add Notes. The devices are manufactured in planar base island technology with monolithic Darlington configuration Datasheet contains preliminary data; supplementary data will be published at a later date. File SizeKbytes. MinimumMultiples Description: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS. Compare Product. More Information. Product Overview. Factory Lead-TimeWeeks.