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# Bjt formulas pdf **
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saturation. VCE. VBC VBEcut-off. Open bookBJT: Regions of Operation. Department of EECS University of California, Berkeley EECS Fall, LectureBJT Active Mode Terminal Equations Voltage acrossterminals (base/emitter) controls current at the 3rd (collector): npn pnp Additional observation (applies to both transistor types) – total input current equals total output current: ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = T BE C S V v i I exp ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = T EB C S V v i I Since we know that the nominal β for the transistor is, we can calculate the base current, using the equivalent base circuit of Figure (a), and determine the ratio of base to collector current: VON VIB − γ= RB = 1, = mA. VBE. VBC. C+. forward active. Holes injected into emitter recombine at ohmic contact as in Forward Active The BJT () BJT Physics () BJT Ebers-Moll Equations () BJT Small-Signal Model. reverse. Forward active: device has high voltage gain and high β; Reverse active: poor β; not useful; Cut-off: negligible current: nearly an open circuit; Saturation: device is flooded with minority carriers; The actual large-signal current gain is therefore equal to/ = Calculator Required. BJTDC Analysis Whenever we want to analyze BJT circuits only with DC voltages, use the following stepsAssume that the transistor is operating in active mode Collector Base Emitter p p (a) (b) Base Emitter pn n Figure Simple geometry of bipolar transistors: (a) npn and (b) pnp PartSemiconductor Devices and Basic Since we know that the nominal β for the transistor is, we can calculate the base current, using the equivalent base circuit of Figure (a), and determine the ratio of base to Electrons injected from collector into the base are collected by the emitter as in Reverse Active case.