2p4m scr datasheet pdf

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2p4m scr datasheet pdf


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They are especially recommended for use on solid state APPLICATIONS Electric blanker, Electronic jar, Datasheet and Replacements for 2P4M (SCR). DescriptionA PLASTIC MOLDED THYRISTOR. Welcome your RFQ!2P4M SCR PinoutP4M is a solid state semiconductor device called Thyristor or SCR (Silicon Controlled Rectifier). File SizeKbytes. Manufacturer: NEC 2P4M is a solid-state semiconductor device called Thyristor or SCR (Silicon Controlled Rectifier). This article is going to introduce a pin diagram, datasheet, circuit, replacements, and more details about 2P4M SCR. Furthermore, there is a huge range of semiconductors, capacitors, resistors, and ICs in stock. PartP4M. Cross Reference Search TitleP4M,2P5M,2P6M DS Author: NEC Corporation/NEC Corporation Subject: SCB Created Date/20/PM 1 DescriptionP4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. The device is designed to have highly sensitive trigger levels and is suitable for applications where available gate currents are limited TitleP4M,2P5M,2P6M DS Author: NEC Corporation/NEC Corporation Subject: SCB Created Date/20/PM The 2P4M and 2P6M are a P gate all diffused mold type Thyristor grantedA On-state Average Current (TC=°C), with rated voltages up to V. FeaturesEasy installation by TOAA packageLess holding current distribution provides free application design. They are especially recommended for use on solid g: scr Manufacture NEC Datasheet Download 2P4M Datasheet Recommended third-party 2P4M Datasheet Part NumberP4M FunctionA, V, PLASTIC MOLDED THYRISTOR Package: TOAA Type Maker: NEC, Renesas Technology Pinouts: Description:The 2P4M and 2P6M are a P gate all diffused mold type Thyristor grantedA On-state Download 2P4M Datasheet. ApplicationsElectric blanket, Electronic jar, Various temperature 1 DescriptionP4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference.

 

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