Irfz48n datasheet pdf

# Irfz48n datasheet pdf
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IRFZ48N. IRFZ48N Normalized On-Resistance Vs. Temperature FigTypical Output Characteristics FigTypical Output Characteristics FigTypical Transfer IRFZ48NS/ QG QGS QGD VG Charge D.U.T. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV IRFZ48NPbF Product Data Sheet. OverviewV Single N-Channel Power MOSFET in a TO package Description. Part: IRFZ48N. VDS IG ID 3mA VGS.3µFKΩV.2µF Current Regulator Same Type as D.U.T. Current Sampling IRFZ48NV Single N-Channel Power MOSFET in a TO package. The Pulse; API; BOM Tool; Sign In. NXP IRFZ48N Product details N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology Description: HEXFET Power MOSFET. File SizeKbytes. VDS IG ID 3mA VGS.3µFKΩV.2µF Current Regulator Same Type as D.U.T. Manufacturer: International Rectifier View and download the latest NXP Semiconductors IRFZ48N PDF Datasheet including technical specifications. Categories. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area IRFZ48NS/ QG QGS QGD VG Charge D.U.T. Description. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide Download IRFZ48N Datasheet. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating °C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free. Current Sampling Resistors +-˛ ˜ˇ MOSFET (Si/SiC) N-Channel Power MOSFET.